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A Dual-Conduction Class-C VCO for a Low Supply Voltage

机译:用于低电源电压的双导通 C 类 VCO

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摘要

This paper proposes a dual-conduction class-C VCO for ultra-low supply voltages. Two cross-coupled NMOS pairs with different bias points are employed. These NMOS pairs realize an impulse-like current waveform to improve the phase noise in the low supply conditions. The proposed VCO was implemented in a standard 0.18 μm CMOS technology, which oscillates at a carrier frequency of 4.5 GHz with a 0.2-V supply voltage. The measured phase noise is -104 dBc/Hz@l MHz-offset with a power consumption of 114μW, and the FoM is -187dBc/Hz.
机译:本文提出了一种用于超低电源电压的双导通C类VCO。该器件采用两个具有不同偏置点的交叉耦合NMOS对。这些NMOS对实现了类似脉冲的电流波形,以改善低电源条件下的相位噪声。所提出的VCO采用标准的0.18 μm CMOS技术实现,该技术在4.5GHz的载波频率下振荡,电源电压为0.2 V。测得的相位噪声为-104 dBc/Hz@l MHz偏置,功耗为114μW,FoM为-187dBc/Hz。

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