A Design of Temperature-Compensated Complementary Metal-Oxide Semiconductor Voltage Reference Sources with a Small Temperature Coefficient

摘要

A novel design for temperature-compensated complementary metal-oxide semiconductor (CMOS) voltage reference sources by using the 1st order voltage reference taking into account the electrical property of the conventional current generator was proposed to minimize a temperature coefficient. A temperature coefficient of the proposed voltage reference source was estimated by using the current generator, which operated at smaller or larger temperature in comparison with the optimized operating temperature. The temperature coefficient at temperature range between -40℃ and 125℃, obtained from the simulated data by using hynix 0.35μm CMOS technology, was 3.33 ppm/℃. The simulated results indicate that the proposed temperature-compensated CMOS voltage reference sources by using the 1st order voltage reference taking into account the electrical properties of the conventional current generator can be used to decrease the temperature coefficient.