Optical and lasing characteristics of single-crystal CdSe:Cr2+ active elements grown by the Bridgman method

摘要

The Bridgman method has been used to grow CdSe ingots doped with Cr2+ ions at a rate of 1.5 mm/h. A method of co-doping the given material with a Ag acceptor impurity is proposed in order to increase the resistivity and reduce the optical losses in the CdSe:Cr2+ crystals caused by absorption at free charge carriers. Lasing in the mid-IR region (2.65-2.8 mu m) is obtained in the as-grown CdSe: Cr2+ samples. (C) 2017 Optical Society of America.