Optimizing the parameters of a system consisting of a photosensitive IR element based on multilayer structures with quantum wells and a silicon photoelectric multiplexer

摘要

This paper discusses the design and process principles involved in optimizing the noise-equivalent temperature difference of photodetectors based on multilayer structures with quantum wells in wide ranges of the structural and process limitations of silicon multiplexers, CMOS-technology design norms, and the parameters of photosensitive elements for the long-wavelength IR spectral region. (C) 2017 Optical Society of America