Procedure for the extraction of the bulk-charge effect parameter in MOSFET models

摘要

A technique is proposed to extract the bulk-charge effect parameter from the triode region of operation of the MOSFET characteristics. The method involves making two measurements of drain current as a function of gate voltage at two small values of the drain voltage. The procedure was tested on synthetic I_d-V_(gs) characteristics modeled with SPICE and simulated by a 2D device simulator. It was also applied to measured I_d-V_(gs) characteristics of real devices. Both constant and normal field dependent mobilities were considered for comparison. Very good agreement is obtained between the parameters used in modeling and simulation and the extracted values.