Arrays of InP-based avalanche photodiodes (APDs) with InGaAsP absorber regions have been fabricated and characterized in the Geiger mode for photon-counting applications. Measurements of APDs with InGaAsP absorbers optimized for 1.06 $mu$m wavelength show dark count rates (DCRs) $#x226A;20$ kHz for room-temperature operation with photon detection efficiency (PDE) up to 50 and a reset or dead time of 1$;mu$s. APDs with InGaAs absorbers optimized for 1.55 $mu$m wavelength and 240 K temperature have DCRs #x226A;20 kHz, PDE up to 45, and a reset time of $sim$ 6 $mu$s. Arrays for both wavelengths have been fabricated and packaged with GaP microlenses (of 100 and 50 $mu$m pitch) and CMOS readout integrated circuits (ROICs). Comparisons are made between ROICs that operate in the framed-readout mode as well as those that operate in continuous-readout mode.
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