The asymmetry of the tunneling time in type II semiconductor heterostructures

摘要

The tunneling time asymmetry in type II semiconductor heterostructures is related to the phase difference of the reflection coefficients for the two tunneling directions. Analytical expressions and numerical simulations are given for the difference between the left-to-right and right-to-left tunneling times in asymmetric, single and multiple barrier type II heterostructures. References: 8