A brief review of single crystal growth techniques and the associated problems is presented. Emphasis is placed on models for various transport and defect phenomena involved in the growth process with the ultimate aim of integrating them into a comprehensive numerical model. The sources of dislocation nucleation in the growing crystal are discussed, and the propagation and multiplication of these under the action of thermal stresses is discussed. A brief description of a high-level numerical technique based on multiple adaptive grid generation and finite volume discretization is presented, followed by the result of a representative numerical simulation.
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