Wave propagation in a temperature rate-dependent semiconducting medium with hydrostatic initial stress

摘要

The aim of this paper is to investigate the effect of hydrostatic initial stress and temperature dependence of the modulus of elasticity on surface wave propagation in the semiconducting medium under photothermal theory. An infinite elastic half-space is overlying the infinite semiconducting medium and a mechanical force of constant magnitude is applied along with the interface. Surface wave solutions are used to solve the coupled plasma, thermal, and elastic wave equations. The effect of hydrostatic initial stress and temperature dependent properties have been studied and depicted graphically on the penetration depths of the waves and the components of stresses, displacement, temperature distribution and carrier density. It is observed that the effect of hydrostatic initial stress on the penetration depths is prominent in temperature independent semiconducting medium.