Linear 288 x 4-format photodetector with a bidirectional time-delay-and-storage regime

摘要

Infrared n-p-photodiode photodetectors based on a hybrid assembly of photosensitive elements of format 288 x 4 with a 56 x 43-mu m step, made from mercury-cadmium telluride heteroepitaxial structures obtained by molecular-beam epitaxy, have been developed, fabricated, and investigated for the 8-12-mu m spectral range, along with silicon multiplexers with bidirectional scanning and internal time delay and storage of the signal. The 288 x 4-format linear photodetector has the following mean values of voltage sensitivity, detectivity, and NETD at the maximum sensitivity: (1-3) x 10(8) V/W, (1.5-2.0) x 10(11) cm Hz(1/2) W-1, and 9 mK, respectively. There are no defective channels. C1 Vasil'ev, V. V.; Predein, A. V.; Varavin, V. S.; Mikhailov, N. N.; Dvoretskii, S. A.; Reva, V. P.; Sabinina, I. V.; Sidorov, Yu. G.; Suslyakov, A. O.; Aseev, A. L. Russian Acad Sci, Inst Semicond Phys, Siberian Sect, Novosibirsk 630090, Russia. Sizov, F. F. Sci Acad Sci Ukraine, Inst Semicond Phys, Kiev, Ukraine.