Annealing Study of the Electrochemically Deposited InS_xO_y Thin Film and Its Photovoltaic Application

摘要

Indium-sulfide-oxide thin films have been successfully deposited on indium-tin-oxide-coated glass from an aqueous solution containing Na_2S_2O_3 and In_2(SO_4)_3 by electrochemical deposition using a periodic 2-step-pulsc voltage. The films have been annealed in nitrogen atmosphere for an hour at different temperatures; namely, 100, 200, 300 and 400℃. Then, the as-deposited and annealed films were characterized structurally, morphologically and optically. X-ray photoelectron spectroscopy (XPS) study was performed in order to understand the chemical states of the oxygen involved in the film composition. The photosensitivity was observed by means of photoelectrochemical measurements, which confirmed that the as-deposited and annealed films showed n-type conduction. Moreover, a heterostructure solar cell that has indium sulfide as a buffer layer and tin sulfide as an absorber was fabricated and characterized.