Investigating processes for forming an infrared CdHgTe-based photodetector in a monolithic version

摘要

This paper discusses the results of investigations of processes for forming monolithic integrated cadmium-mercury telluride (CdHgTe)-based IR arrays and their parameters. The processes for growing CdHgTe heteroepitaxial layers (HELs) by molecular-beam epitaxy (MBE) in the cells of a silicon multiplexer have been studied, as well as for forming an n-p junction and contact compounds. For the selective growth of CdHgTe MBE HELs, regimes have been determined for preparing a silicon surface in dielectric windows with dimensions from 30 X 30 to 100 X 100 Am. Selective layers of CdHgTe (8 mu m)/CdTe (5-7 mu m)/ZnTe (0.02 mu m) have been grown on Si (310). Ion implantation of boron into selective p-type layers has been used to form n-p junctions. Measurements showed that the parameter R(0)A is 1.25 x 10(5) Omega cm(2) for the spectral range 3-5 mu m. A monolithic linear array of format 1 x 32, based on a CdHgTe MBE HEL, has been fabricated by growth in the cells of a silicon multiplexer.