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首页> 外文期刊>Mathematical Problems in Engineering: Theory, Methods and Applications >Experimental Research on Discharge Forming Cutting-Electrochemical Machining of Single-Crystal Silicon
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Experimental Research on Discharge Forming Cutting-Electrochemical Machining of Single-Crystal Silicon

机译:单晶硅放电成形切削电化学加工实验研究

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摘要

During the wire electrical discharge machining (WEDM) process, a large number of discharge pits and a recast layer are easily generated on the workpiece surface, resulting in high surface roughness. A discharge forming cutting-electrochemical machining method for fabricating single-crystal silicon is proposed in this study to solve this problem. On the same processing equipment, single-crystal silicon is first cut using the discharge forming cutting method. Second, electrochemical anodic reaction technology is used to dissolve the discharge pits and recast layer on the single-crystal silicon surface. The machining mechanism of this process, the surface elements of the processed single-crystal silicon and a comparison of the kerf width are analyzed through experiments. On this basis, the influence of the movement speed of the copper foil electrode during electrochemical anodic dissolution on the final surface roughness is qualitatively analyzed. The experimental results show that discharge forming cutting-electrochemical machining can effectively eliminate the electrical discharge pits and recast layer, which are caused by electric discharge cutting, on the surface of single-crystal silicon, thereby reducing the surface roughness of the workpiece./p
机译:在线切割加工(WEDM)过程中,工件表面容易产生大量的放电凹坑和重铸层,导致表面粗糙度高。针对该问题,该文提出一种用于制备单晶硅的放电成形切削电化学加工方法。在同一加工设备上,首先使用放电成形切割方法切割单晶硅。其次,采用电化学阳极反应技术溶解放电坑和重铸层在单晶硅表面。通过实验分析了该工艺的加工机理、加工后单晶硅的表面元素以及切口宽度的比较。在此基础上,定性分析了电化学阳极溶解过程中铜箔电极运动速度对最终表面粗糙度的影响。实验结果表明,放电成形切割-电化学加工可以有效消除单晶硅表面因放电切割而产生的放电凹坑和重铸层,从而降低工件表面粗糙度。

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