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首页> 外文期刊>MRS Communications >Semimetal transition in curved MoS2/MoSe2 Van der Waals heterojunction by dispersion-corrected density functional theory
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Semimetal transition in curved MoS2/MoSe2 Van der Waals heterojunction by dispersion-corrected density functional theory

机译:Semimetal transition in curved MoS2/MoSe2 Van der Waals heterojunction by dispersion-corrected density functional theory

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Abstract We present a theoretical study for MoS2/MoSe2 Van der Waals heterojunction in the armchair direction, and periodicity in the y-direction, under the mechanical deformation process to explore electronic structure vs. curvature angle. Our findings reveal that?the heterojunction maintains chemical stability, even under high deformation, and?the bandgap of the?heterojunction is inversely proportional to curvature angle; the shift from semiconductor—with a bandgap of 0.8?eV—to semimetal?occurs at deformation angles as low as 5°, having a gapless material. The mentioned transition corresponds mainly to distortion of half-filled molybdenum d-orbitals and chalcogen–chalcogen p-orbitals overlapping near the Fermi level.Graphical abstract
机译:抽象的理论研究扶手椅的方向,和周期性上机械变形探索电子结构和过程。弯曲的角度。异质结保持化学稳定性在高变形,?的吗?弯曲角度;semiconductor隙0.8吗?半金属?5°,无间隙的材料。过渡主要对应的畸变装钼d轨道,chalcogen-chalcogen p轨道重叠的附近费米能级。

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