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首页> 外文期刊>Catalysis science & technology >Accurate modulation of NiS cocatalysts on the photoelectron transfer sites of BiVO4 for photocatalytic H2O2 generation
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Accurate modulation of NiS cocatalysts on the photoelectron transfer sites of BiVO4 for photocatalytic H2O2 generation

机译:Accurate modulation of NiS cocatalysts on the photoelectron transfer sites of BiVO4 for photocatalytic H2O2 generation

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摘要

Lacking effective active sites on the BiVO4 surface severely restricts the photocatalytic H2O2-formation activity. As a promising and mainstream cocatalyst, NiS with rich active sites is widely applied to improve the catalytic activity of host photocatalysts. However, it is rarely reported to facilitate photocatalytic O2 reduction to produce H2O2. In this study, a sulfur (S)-mediated photodeposition method is adopted to precisely modify a NiS cocatalyst at the photoelectron transfer sites of BiVO4. Specifically, photoelectrons enrich a enough high concentration of Ni2+ ions on the (010) facet of BiVO4, where the S molecules combine with them to in situ form NiS and deposit on its surface. Photocatalytic results show that 10 wt% NiS/BiVO4 obtains optimal photocatalytic performance with a H2O2-production concentration of 975 μmol L-1 (AQE = 4.8%), which is about 87 times that of pristine BiVO4. The remarkable performance of the NiS/ BiVO4 photocatalyst can be ascribed to the accurate modification of an efficient NiS cocatalyst at the photoelectron transfer sites of BiVO4, which can accelerate photogenerated charge migration, promote surface O2 adsorption and boost the interfacial O2 reduction reaction of BiVO4. This work offers a novel approach for the precise modification of transitional metal-sulfide cocatalysts for high-efficiency photocatalytic H2O2 production.
机译:缺乏有效的BiVO4活跃的网站表面严重限制了光催化H2O2-formation活动。主流的助催化剂,NiS丰富活跃的网站被广泛应用于提高催化主机催化剂的活性。很少报道促进光催化O2减少产生过氧化氢。硫(S)介导photodeposition方法采用精确修改NiS助催化剂BiVO4的光电子转移地点。具体来说,光电子丰富足够高Ni2 +离子浓度的(010)面BiVO4,年代分子结合原位形成NiS和沉积在其表面。光催化结果表明10 wt % NiS / BiVO4获得最佳的光催化性能H2O2-production 975μ摩尔l - 1的浓度(AQE = 4.8%)的87倍原始BiVO4。NiS / BiVO4光催化剂可以归因于准确的修改一个高效NiS助催化剂在光电子转移地点BiVO4,可以加速photogenerated电荷迁移,促进氧气吸附和表面提高界面氧还原反应的BiVO4。精确的修改过渡金属硫化物为高效:光催化过氧化氢生产。

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