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Concentration, thermodynamic density of states, and entropy of electrons in semiconductor nanowires

机译:半导体纳米线中的浓度、热力学态密度和电子熵

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摘要

Approximate equations for the concentration of charge carriers, the thermodynamic density of states, and the entropy of electrons in semiconductor nanowires are obtained. To find the charge carrier concentration, the equation for the total number of particles was used. Using various approximate expressions for the Fermi-Dirac distribution function, approximate equations for charge carrier concentration, thermodynamic density of states, and entropy are obtained, and graphs of their dependences on the chemical potential at different temperatures are constructed and analyzed. The graphs of the temperature dependence of the chemical potential are presented and analyzed. Using the thermodynamic density of states, the temperature dependences of the energy levels and the thermal coefficients of changes in these levels are obtained.
机译:的浓度近似方程电荷载体,热力学的密度状态,电子的熵半导体纳米线。电荷载体浓度方程使用粒子的总数。不同的近似表达式费米狄拉克分布函数,近似电荷载体浓度方程,热力学态密度和熵获得,和图表的依赖性在不同的温度下化学势构建和分析。依赖于温度的化学势介绍和分析。热力学态密度,温度依赖性的能量水平和热在这些水平系数的变化获得的。

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