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Additive manufacturing-based repair of IN718 superalloy and high-cycle fatigue assessment of the joint

机译:基于增材制造的IN718高温合金修复及接头高周疲劳评估

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摘要

Room-temperature high-cycle fatigue (HCF) of IN718 repaired joint via laser direct energy deposition (DED) were studied with the fatigue axis perpendicular to the joint interface. Solution treated and aged (STA) were compared with directly aged (DA) conditions. The wrought IN718 substrate showed equiaxed grains with a size of ~90 μm and a high fraction of annealing twins, whereas the DED deposit revealed a mixture of equiaxed and columnar grains with an average size of ~20 μm. There was little difference between the STA and DA conditions in the grain length-scale. Micro-hardness results highlighted the need for the heat treatment as it can remove the heat-affected zone and hardness dip, creating a uniform hardness profile across the joint. Although the monolithic DED deposit had a similar tensile strength to the wrought substrate, the DED joint exhibited an overall decreased HCF performance, regardless of the heat treatment conditions. When the fatigue stress was low, the STA condition had a better HCF performance than the DA, however, the opposite trend appeared for the high stress, resulting in a cross-over point on the stress-life S-N plot. Interrupted fatigue tests, combined with microscopy and fractography, revealed that the fatigue failure occurred in the substrate for the DED joint in the DA condition, whilst in the deposit zone for the STA condition due to the distribution and fracture of the Laves and δ phases. Grain boundary cracking in the substrate near the substrate-to-deposit interface can occur in both cases, probably due to the Nb-rich liquid films.
机译:IN718的室温高疲劳(HCF)通过激光直接沉积能量修复关节(d)与疲劳轴进行了研究垂直于联合接口。治疗和年龄(STA)进行了比较岁的直接(DA)条件。底物显示等轴颗粒的大小~ 90μm和高分数的退火双胞胎,而d存款透露的混合物等轴和柱状颗粒平均尺寸~ 20μm。STA和DA谷物的条件长度范围。需要热处理,可以删除热影响区硬度下降,创造统一的硬度在联合剖面。虽然整体d存款也有类似的抗拉强度的衬底,d联合整体降低HCF展出性能,无论热处理条件。STA条件HCF性能比然而,DA相反的趋势出现高应力,导致一个交叉的观点在协同)的阴谋。测试,结合显微镜和金相,显示,疲劳失效发生衬底的d联合达条件,同时在STA沉积区条件由于分布和断裂的遗留物和δ阶段。衬底附近的substrate-to-deposit接口可能发生在这两种情况下,可能由于Nb-rich液体的电影。

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