Tunneling transport of 2D anisotropic XC (X = P, As, Sb, Bi) with a direct band gap and high mobility: a DFT coupled with NEGF study

摘要

Direct bandgap and significant anisotropic properties are crucial and beneficial for nanoelectronic applications. In this work, through first-principles calculations, we investigate novel two-dimensional (2D) α-XC (X = P, As, Sb, Bi) materials, which possess a direct bandgap of 0.73 to 1.40 eV with remarkable anisotropic electronic properties. Intriguingly, 2D α-XC presents the highest electron mobility near 8 × 103 cm2 V−1 s−1 along the Γ–X direction. Moreover, the transfer characteristics of the 2D α-XC TFETs are thoroughly assessed through NEGF methods. AsC TFETs demonstrate an on-state current larger than 2.2 × 103 μA μm−1, which can satisfy the International Technology Roadmap for Semiconductors (ITRS) for high-performance requirements. In particular, the minimum value of subthreshold swing of devices is as low as 15 mV dec−1, indicating excellent device switching characteristics. The relevant calculation results show that 2D α-XC monolayers could be a promising candidate in next-generation high-performance device applications.