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首页> 外文期刊>Nanoscale >Unusual nanoscale piezoelectricity-driven high current generation from a self S-defect-neutralised few-layered MoS2 nanosheet-based flexible nanogenerator
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Unusual nanoscale piezoelectricity-driven high current generation from a self S-defect-neutralised few-layered MoS2 nanosheet-based flexible nanogenerator

机译:基于自S缺陷中和的少层MoS2纳米片柔性纳米发电机的不寻常的纳米级压电驱动大电流发电

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摘要

We report the fabrication of a high-performance flexible piezoelectric nanogenerator based on S-defect-neutralised few-layered molybdenum disulphide (MoS2) nanosheets. High-resolution transmission electron microscopy (HR-TEM) and Raman spectroscopy confirmed the number of stacked layers in the MoS2 sheets to be 3–5. The defect, electronic and chemical states of the as-grown MoS2 nanosheets were investigated by X-ray photoelectron spectroscopy (XPS). An as-fabricated MoS2 nanogenerator with a CNT electrode generates an excellent high output voltage of 22 V and a record-high output current density of 9.00 μA cm−2 under a small vertical compressive force of 1.5 kgf. The piezoelectric charge coefficient of the 2D MoS2 nanosheets was investigated using piezoelectric force microscopy (PFM), and a very high piezoelectric charge coefficient (d33) of 120 pm V−1 was obtained. The energy conversion efficiency of the device was about 30%. Moreover, the MoS2 nanosheets show a high dielectric constant of about 2649 at low frequency. The results suggest that the absence of S-defects can reduce the free charge carrier and screening effect, resulting in a high output voltage and current density. The performance of the nanogenerator is discussed in terms of its high d33, high dielectric constant, the crystalline mixed phase of MoS2 and the electronic state of the MoS2 nanosheets.
机译:我们报告一个高性能的制造灵活的基于压电王中林教授S-defect-neutralised一些层次化的钼二硫化物(监理)nanosheets。透射电子显微镜(HR-TEM)和拉曼光谱的数量确认堆叠层二硫化钼表3 - 5。缺陷,电子和化学状态是成年人二硫化钼nanosheets调查x射线光电子能谱(XPS)。纯属捏造二硫化钼王中林教授问电极产生一个优秀的高输出22 V的电压和一个创纪录的高输出电流密度为9.00μ厘米−2下一个小的垂直1.5公斤的压缩力。系数的2 d二硫化钼nanosheets收费使用压电式力显微镜研究(PFM),一个非常高的压电电荷120点V−1的系数(d33)。能量转换效率的装置约30%。高介电常数约2649在低频率。S-defects可以减少自由电荷载体和屏蔽效应,导致一个高输出电压和电流密度。王中林教授的讨论d33高,高介电常数,水晶的二硫化钼和混合阶段二硫化钼nanosheets的电子态。

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