Reversible charge-polarity control for a photo-triggered anti-ambipolar In2Se3WSe2 heterotransistor

摘要

Based on the charge-polarity control, a novel anti-ambipolar heterotransistor is proposed based on a special In2Se3WSe2 van der Waals heterostructure. Unlike traditional logic transistors, our antiambipolar heterotransistor can treat an optical signal as an input to change its operating state, that is, with the switching of the optical signal, it shows a reversible polarity change between antiambipolar and P-type. Moreover, with the increase of laser power density from 0 to 4.4 mW cm-2, the current value corresponding to the anti-ambipolar peak of the device (Ipeak) shifts from 0 to 4.3 nA, and the voltage value corresponding to the anti-ambipolar peak of the device (Vpeak) can shift from -7 to -5.67 V. These phenomena demonstrate that the charge neutrality point of the anti-ambipolar heterotransistor can be selectively varied with the change of laser power density. In addition, the aforementioned device possesses a high Ion/Ioff ratio of about 104 (405 nm, 4.4 mW cm-2) at 0 V. These properties indicate that our unique anti-ambipolar In2Se3WSe2 heterotransistor can be employed in phototriggered inverters for future optoelectronic circuits, and it has great potential to improve the integration of overall chip circuits by implementing optoelectronic logic functions in a unit.