Findings on Electronics Discussed by Investigators at University of Electronic Science and Technology of China (Effect of the Surface Activation Parameter On the Fabrication Process of 4h-sic Film On Sio2/si Using the Crystal-ion-slicing …)

摘要

By a News Reporter-Staff News Editor at Electronics Newsweekly –Investigators publish new report on Electronics. According to news reporting out of Chengdu, People’sRepublic of China, by VerticalNews editors, research stated, “4H-silicon carbide on silicon (4H-SiC on Si)fabricated by crystal-ion-slicing (CIS) technology can be served as an integration platform for optoelectronicdevices and composite substrate for gallium nitride heteroepitaxy. The bonding strength of 4H-SiC on Siis closely related to the surface activation parameter, which finally impacts the fabrication process.”