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Root-growth of boron nitride nanotubes: experiments and ab initio simulations

机译:根系生长的氮化硼纳米管:实验和从头开始模拟

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We have synthesized boron nitride nanotubes (BNNTs) in an arc in the presence of boron and nitrogen species. We find that BNNTs are often attached to large nanoparticles, suggesting that root-growth is a likely mechanism for their formation. Moreover, the tube-end nanoparticles are composed of boron, without transition metals, indicating that transition metals are not necessary for the arc synthesis of BNNTs. To gain further insight into this process we have studied key mechanisms for root growth of BNNTs on the surface of a liquid boron droplet by ab initio molecular dynamics simulations. We find that nitrogen atoms reside predominantly on the droplet surface where they organize to form boron nitride islands below 2400 K. To minimize contact with the liquid particle underneath, the islands assume nonplanar configurations that are likely precursors for the thermal nucleation of cap structures. Once formed, the caps are stable and can easily incorporate nitrogen and boron atoms at their base, resulting in further growth. Our simulations support the root-growth mechanism of BNNTs and provide comprehensive evidence of the active role played by liquid boron.
机译:我们已经合成氮化硼纳米管(BNNTs)硼和弧氮物种。连接到大的纳米颗粒,表明根系生长是一个可能的机制形成。是由硼,没有过渡金属,表明过渡金属对电合成BNNTs也是必要的。进一步了解这个过程我们学习了BNNTs的根系生长的关键机制液体表面硼滴从头开始分子动力学模拟。氮原子主要居住在液滴表面组织形成硼氮化硅岛2400 K以下。下面的液体粒子,这些岛屿假设空间的配置可能前兆热成核的帽子结构。可以很容易地将氮和硼原子在他们的基地,导致进一步的增长。模拟的根系生长机制的支持BNNTs并提供全面的证据活跃的液态硼所扮演的角色。

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