机译:增强的光致发光和空穴迁移率在1到五InSe由于价带顶部反演:应变效应
Inner Mongolia Normal Univ, Coll Phys & Elect Informat, Hohhot 010022, Peoples R China;
Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China;
Refractive surgery enhancement; Perpendicular; Electron mobilityBand gapHole mobilityLight emissionBLUE SHIFT;
机译:Six-band k·p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
机译:Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN2 and MgSiN2
机译:Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors