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机译:电子阻挡层上的影响发光性能oxide-confinedintracavity-contacted InGaN-based垂直腔表面发射激光
Thi Qar Univ, Coll Sci, Dept Phys, NNRL, Nassiriya, Iraq;
Shahid Beheshti Univ, GC, Dept Engn, Tehran, Iran;
Univ Sains Malaysia, Sch Phys, Nanooptoelect Res {L-End} & Technol Lab, George Town 11800, MalaysiaGrad Univ Adv Technol, Inst Sci {L-End} & High Technol {L-End} & Environm Sci, Dept Semicond, Kerman, Iran;
active region; threshold currents; Quantum efficiencyVertical cavity surface emitting lasersCarrier confinementblock layersoptimum performancesimulatingQuantum wells;
机译:Nanoporous GaN and Its Application in Vertical-Cavity Surface-Emitting Lasers =氮化镓纳米孔洞及其在垂直腔面发射激光器中的应用
机译:High-performance InGaN-Based Green Resonant-Cavity Light-Emitting Diodes for plastic Optical Fiber applications