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Stability of cubic tin sulphide nanocrystals: role of ammonium chloride surfactant headgroups

机译:稳定的立方硫化锡纳米晶体:角色氯化铵的表面活性剂headgroups

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New semiconducting metastable cubic phases have been recently discovered in the tin monosulfide and monoselenide systems. Surface energy calculations and experimental studies indicate that this cubic p-phase is stabilized by specific ligand adsorption on the surface. In this work, it is shown experimentally that the synthesis carried out using mixtures of oleylamine and oleylammonium chloride (OACl) surfactants results in the cubic phase, transforming the growth from orthorhombic to cubic nanoparticles with increasing OACl concentration up to a limiting point. Complementary ab initio calculations find that adsorbed ligands lower the surface energies for both the cubic phase and the orthorhombic phase, relative to the pristine surfaces. The decrease in the surface energy increases with ligand coverage. Stronger binding energies to the cubic phase suggest a higher coverage, and therefore preferential stabilization of this phase. Upon further increasing the coverage, the surface energy becomes negative, effectively destabilizing the particles in agreement with experimental observations. Bonding analysis shows that Cl bonds to Sn and replaces missing Sn-S bonds at the surface of the cubic structure. In the competing orthorhombic layered phase, Cl also bonds to a Sn atom but at the expense of one of the Sn-S bonds of this Sn atom. This observation can explain the trends of the surface energies. This combined experimental and computational analysis sheds light on the stabilization processes of these nano-materials and indicates the path to improve synthetic routes.
机译:新的半导体亚稳立方阶段最近发现的锡一硫化物和monoselenide系统。计算和实验研究表明这个立方p-phase由特定的稳定配体表面吸附。实验表明,合成使用油胺的混合物oleylammonium氯(OACl)表面活性剂的结果在立方阶段,改变的增长斜方晶系的立方纳米颗粒增加OACl浓度限制点。表面吸附配体低能量立方阶段和斜方晶系的阶段,相对于原始表面。降低表面能增加配体的报道。立方阶段提出更高的覆盖率因此优惠稳定阶段。表面能变成负的,有效的不稳定粒子同意实验观察。Cl债券Sn和Sn-S取代失踪债券表面的立方结构。斜方晶系的分层竞争阶段,Cl债券Sn原子但牺牲之一Sn-S债券的Sn原子。可以解释的趋势表面能量。这个实验和计算相结合分析揭示了稳定这些纳米材料和表示的过程路径来提高合成路线。

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