Porosification-reduced optical trapping of silicon nanostructures

摘要

Metal-assisted chemical etching (MACE) was carried out to fabricate solid silicon nanowires (s-SiNWs) and mesoporous silicon nanowires (mp-SiNWs). Total reflection and transmission were measured using an integrated sphere to study optical properties of the MACE-generated silicon nanostructures. Without NW aggregation, mp-SiNWs vertically standing on a mesoporous silicon layer trap less light than s-SiNWs over a wavelength range of 400-800 nm, owing to porosification-enhanced optical scattering from the rough inner surfaces of the mesoporous silicon skeletons. Porosification substantially weakens the NW mechanical strength; hence the elongated mp-SiNWs aggregate after 30 min etching and deteriorate optical trapping.