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机译:单层钨的电子特性二硫化硅上外延石墨烯硬质合金
Max Planck Inst Festkorperforsch, Heisenbergstr 1, D-70569 Stuttgart, Germany;
CNR, SPIN, Corso F Perrone 24, I-16152 Genoa, Italy;
Elettra Sincrotrone Trieste SCpA, I-34149 Trieste, ItalyIst Italiano Tecnol, Ctr Nanotechnol Innovat NEST, Piazza San Silvestro 12, I-56127 Pisa, ItalyCNR, Ist Nanosci, NEST, Piazza S Silvestro 12, I-56127- Pisa, ItalyUniv Genoa, OPTMATLAB, Via Dodecaneso 33, I-16146 Genoa, Italy;
graphene; x-ray photoemission electron microscopy; Electronic propertiesDisulfidesSpin-orbit splittingWaardenburg syndrome type 2AINTERFACIAL COUPLINGWork function;
机译:top-gated的电子输运性质epitaxial-graphene nanoribbon场效应晶体管碳化硅晶片
机译:SAI呢-go百年不遇SD暗讽silicon carbide
机译:减少graphene-tungsten trioxide-based混合材料与peroxidase-like活动
机译:Photothermal Properties of Graphene/Silver Nanoparticles Grating Film
机译:利用扫描穿隧显微镜探讨在硒化铟上未氧化表面和氧化表面之介面接合处的电子特性 =Scanning Tunneling Microscope study of InSe Surface Electronic Properties at the Fresh/Oxided Interface Junction
机译:类似于锂离子电池阳极的Silicon @ void @ graphene-Like纳米片复合材料的银耳状纳米结构。
机译:Electronic properties of LpCVD silicon films.
机译:1500℃退火对CVD sIlicon Carbide中离子注入银迁移和释放的影响