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首页> 外文期刊>Nanoscale >Stabilizing the commensurate charge-density wave in 1T-tantalum disulfide at higher temperatures via potassium intercalation
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Stabilizing the commensurate charge-density wave in 1T-tantalum disulfide at higher temperatures via potassium intercalation

机译:稳定的电荷密度波1二硫化t-tantalum在更高的温度通过钾夹层

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The 1T phase of tantalum disulfide (1T-TaS2) possesses a variety of charge-density-wave (CDW) orders, and as a result, it attracts an increasing amount of academic and technological interest. Researchers have devoted tremendous efforts towards understanding the impacts of doping, alloying, intercalation or other triggering agents on its charge density wave orders. In this work, we demonstrate that incorporating potassium chloride (KCl) during chemical vapor deposition (CVD) of TaS2 can control the phase (1T, 2H or metal nanowires) via the intercalation of potassium ions (K+) between TaS2 layers. Finally, we demonstrate that K+ not only impacts the structure during synthesis but also strongly impacts the CDW phase transition as a function of temperature, increasing the nearly commensurate (NCCDW) to commensurate (CCDW) transition to just below room temperature.
机译:1 t二硫化阶段的钽(1 t-tas2)具有不同的电荷密度波(CDW)订单,因此,它吸引了一个越来越多的学术和技术的兴趣。努力理解的影响兴奋剂、合金化、夹层等引发剂的电荷密度波订单。将氯化钾(氯化钾)期间化学汽相淀积(CVD) TaS2可以控制阶段(1 t、2 h或金属纳米线)通过钾离子的夹层(K +)之间TaS2层。在合成,但只影响结构也强烈影响车损险相变温度的函数,越来越近相称(NCCDW)相称(CCDW)过渡到略低于室温。

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