...
首页> 外文期刊>Nanoscale >Broad-band high-gain room temperature photodetectors using semiconductor-metal nanofloret hybrids with wide plasmonic response
【24h】

Broad-band high-gain room temperature photodetectors using semiconductor-metal nanofloret hybrids with wide plasmonic response

机译:宽带高增益室温光电探测器使用半导体金属nanofloret混合动力车与广泛的电浆的反应

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Semiconducting nanowires are widely studied as building blocks for electro-optical devices; however, their limited cross-section and hence photo-response hinder the utilization of their full potential. Herein, we present an opto-electronic device for broad spectral detection ranging from the visible (VIS) to the short wavelength infra-red (SWIR) regime, using SiGe nanowires coupled to a broadband plasmonic antenna. The plasmonic amplification is obtained by deposition of a metallic nanotip at the edge of a nanowire utilizing a bottom-up synthesis technique. The metallic nanotip is positioned such that both optical plasmonic modes and electrical detection paths are coupled, resulting in a specific detectivity improvement of approximate to 1000 compared to conventional SiGe NWs. Detectivity and high gain are also measured in the SWIR regime owing to the special plasmonic response. Furthermore, the temporal response is improved by approximate to 1000. The fabrication process is simple and scalable, and it relies on low-resolution and facile fabrication steps with minimal requirements for top-down techniques.
机译:半导体纳米线被广泛研究构建块光电设备;然而,他们的横截面,因此有限photo-response阻碍的利用率的潜能。光电装置广泛的光谱检测从可见(VIS)短的波长红外线(短波红外成像)政权,使用锗硅纳米线耦合宽带电浆天线。通过沉积金属nanotip的优势纳米线的使用自底向上的合成技术。这样,光和电浆模式电气检测路径耦合,产生的在一个特定的探测能力改善近似1000相比传统的锗硅拥有核武器的国家。短波红外成像政权由于特殊的电浆响应。提高了大约1000。过程简单和可伸缩的,它依赖于低分辨率和灵巧的制造步骤最小的自顶向下的技术要求。

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号