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机译:裁剪特征和转移磁滞在二硫化钼晶体管使用衬底工程
Indian Inst Sci, Dept Instrumentat & Appl Phys, Bangalore 560012, Karnataka, India;
gate voltage; Equipment characteristics; SubstratesTransistor Device ComponentRange gatingHysteresisCarrier densitythreshold voltageCHARGE TRAPPINGTailoring;
机译:Thickness-dependent流动的二维MoS2 transistors
机译:CFD Investigation of the Wetting Characteristics of Aqueous Ionic Liquid Solution on an Aluminum Fin-Tube Substrate
机译:Tailoring the Growth of Graphene on Ru(0001) via Engineering of the substrate surface