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Charge doping induced reversible multistep structural phase transitions and electromechanical actuation in two-dimensional 1T '-MoS2

机译:电荷掺杂引起的可逆多步结构相变和机电驱动二维1 t’-MoS2

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摘要

The 1T ' phase of transition metal dichalcogenides (TMDs) is a low symmetry charge density wave (CDW) phase, which can be viewed as a periodically distorted structure (Peierls distortion) of the high symmetry 1T phase. In this paper, using density functional theory (DFT) calculations, we report that the positive charge (hole) injection is an effective method to modulate the Peierls distortion of MoS(2)1T ' for a new CDW phase and superior electromechanical properties. A new stable CDW phase is discovered at a hole doping level of 0.10 h(+)per atom, named 1T '(t). Hole charging and discharging can induce a reversible phase transition of MoS(2)among the three phases, 1T, 1T ' and 1T '(t). Such a reversible phase transition leads to superior electromechanical properties including a strain output as high as -5.8% with a small hysteresis loop, multi-step super-elasticity, and multi-shape memory effect, which are valuable in active electromechanical device designs at the nanoscale. In-depth analysis of the change of the electronic structure under hole doping was performed to understand the new CDW phase and the observed phase transition. Using charge doping to modulate the Peierls distortion in two-dimensional materials can serve as a general concept for nano-active material designs.
机译:1 t的过渡金属dichalcogenides阶段(tmd)是一种低对称电荷密度波(CDW)阶段,它可以被视为一个定期扭曲的结构(佩尔斯失真)的高对称1 t的阶段。本文利用密度泛函理论(DFT)计算,我们报告的正电荷(洞)注射是一种有效的方法调节MoS (2) 1 t的佩尔斯失真”一个新的车损险阶段和高级机电属性。在空穴掺杂水平0.10 h(+)原子,叫1 t (t)。诱导一个可逆的相变金属氧化物半导体(2)在三个阶段中,1 t, t”和1 t”(t)。包括一个优越的机电特性小应变输出高达-5.8%磁滞回线、多步骤的超弹性multi-shape记忆效应,这是有价值的活跃的机电设备的设计纳米级。兴奋剂是电子结构下洞了解新车损险阶段和执行观察到的相变。佩尔斯失真的调节二维材料可以作为一般概念nano-active材料设计。

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