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首页> 外文期刊>Nanoscale >Multi-component (Ag-Au-Cu-Pd-Pt) alloy nanoparticle-decorated p-type 2D-molybdenum disulfide (MoS2) for enhanced hydrogen sensing
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Multi-component (Ag-Au-Cu-Pd-Pt) alloy nanoparticle-decorated p-type 2D-molybdenum disulfide (MoS2) for enhanced hydrogen sensing

机译:多组分的(Ag-Au-Cu-Pd-Pt)合金nanoparticle-decorated p型2 d-molybdenum二硫(监理)增强氢传感

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摘要

Molybdenum disulfide (MoS2) has emerged as a promising material for the development of efficient sensors. Here, we have exfoliated and decorated MoS(2)flakes with the novel, single-phase multi-component silver-gold-copper-palladium-platinum (Ag-Au-Cu-Pd-Pt) alloy nanoparticles, popularly named High Entropy Alloy (HEA) nanoparticles, using facile and scalable low-temperature grinding, followed by the sonochemical method. It was found that the decoration of HEA nanoparticles imparts the surface-enhanced Raman scattering effect and reduction in the work function of the material from 4.9 to 4.75 eV as measured by UV photoelectron spectroscopy. This change in the work function resulted in a Schottky barrier between the gold contact and HEA decorated MoS(2)flakes as a result of drastic changes in the surface chemical non-stoichiometry. The response to hydrogen gas was studied at temperatures in the range of 30 to 100 degrees C, and it showed an unusual p-type nature due to surface-adsorbed oxygen species. The nanoscale junction formed between HEA and MoS(2)showed a ten-time increase in the response towards hydrogen gas at 80 degrees C. The experimental observations have been explained with DFT simulation showing more favourable hydrogen adsorption on HEA-decorated MoS(2)resulting in an enhanced response.
机译:二硫化钼(监理)已经成为有前途的材料的发展高效的传感器。装饰的金属氧化物半导体(2)片的小说,单相多组分的silver-gold-copper-palladium-platinum(Ag-Au-Cu-Pd-Pt)合金纳米粒子、普遍高熵合金(头脑)纳米颗粒,使用简单和可伸缩的低温磨,紧随其后的是声化学的方法。发现他的装饰吗纳米粒子赋予表面增强拉曼散射效应和减少工作功能材料从4.9到4.75 eV以紫外线光电子能谱。功函数导致的变化肖特基势垒接触和头脑之间的黄金装饰的金属氧化物半导体(2)片作为一个极端的结果表面化学的变化non-stoichiometry。研究了在温度30的范围100摄氏度,它展示了一个不寻常的p型由于surface-adsorbed氧物种自然。他叫之间形成的纳米结和金属氧化物半导体(2)显示ten-time增加响应对氢气在80度c解释了实验观察用DFT模拟显示更有利氢吸附在HEA-decorated金属氧化物半导体(2)导致一个增强的响应。

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