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首页> 外文期刊>Nanoscale >Intrinsic ferromagnetism and valley polarization in hydrogenated group V transition-metal dinitride (MN2H2, M = V/Nb/Ta) nanosheets: insights from first-principles
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Intrinsic ferromagnetism and valley polarization in hydrogenated group V transition-metal dinitride (MN2H2, M = V/Nb/Ta) nanosheets: insights from first-principles

机译:内在的铁磁性和谷极化在氢化组V过渡金属dinitride (MN2H2, M = V / Nb / Ta) nanosheets:从采用的见解

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Due to the extraordinary electronic and magnetic properties, transition-metal dinitrides (TMDNs) and their derivatives are gaining importance in low-dimensional layered materials. In this work, through first-principles calculations, we have comprehensively investigated the structural and electronic properties of hydrogenated group V TMDN nanosheets. We find that surface hydrogenation can well stabilize the H-, T- and M-phase structures of group V TMDNs, for which the formed MN2H2 nanosheets have robust energetic, dynamical and thermal stabilities. Different from pristine MN2 systems, the H-phase system has become the most favorable structure of MN2H2 nanosheets. Intrinsic ferromagnetism is present in these H-MN2H2 nanosheets, which even exhibit bipolar magnetic semiconducting behaviors. More interestingly, large spontaneous valley polarization occurs in the H-MN2H2 nanosheets, and is attributed to the coexistence of remarkable spin-orbit coupling and magnetic exchange interactions according to the k center dot p model analysis. Among them, the H-NbN2H2 nanosheets are found to be a promising ferrovalley material, whose valley polarization value reaches as large as 0.11 eV and the Curie temperature is up to 225 K. Besides that, versatile electronic properties are obtained in the T- and M-phase structures of the MN2H2 nanosheets, which will be magnetic/nonmagnetic metals/semiconductors depending on the metal species and phase structures. Our study demonstrates that the hydrogenation can bring robust structural stabilities and unconventional electronic properties into the group V TMDN nanosheets, which enable many potential applications in spintronics and valleytronics.
机译:由于非凡的电子和磁属性,过渡金属dinitrides (TMDNs)和他们的衍生品越来越重要低维层状材料。通过采用基于计算,我们有全面调查了结构和电子氢化V组的属性TMDN nanosheets。加氢可以稳定H - T -有丝分裂期的结构组V TMDNs,的形成MN2H2 nanosheets健壮精力充沛,动力学和热稳定性。不同于原始MN2系统,H-phase系统已成为最有利的结构MN2H2 nanosheets。出现在这些H-MN2H2 nanosheets,甚至表现出双极磁半导体行为。H-MN2H2谷极化发生nanosheets,归因于共存不同寻常的旋轨道耦合和磁性根据k中心交换相互作用点p模型分析。nanosheets被发现是一种很有前途的ferrovalley材料,其谷极化值达到0.11 eV和居里一样大温度达到225 K。多功能电子获得的属性有丝分裂期和T - MN2H2的结构nanosheets,磁/非磁性根据金属。金属/半导体物种和相结构。表明,加氢可以带来健壮的结构稳定性和非传统的进群V TMDN电子属性nanosheets,使许多潜在的在自旋电子学和valleytronics应用。

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