Using 2D XANES-XEOL spectroscopy, it is found that the band gap emission of ZnO nanowire arrays is substantially enhanced i.e. that the intensity ratio between the band gap and defect emissions increases by more than an order of magnitude when the excitation energy is scanned across the O K-edge. Possible mechanisms are discussed.
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机译:使用2 d XANES-XEOL光谱,它是发现氧化锌纳米线阵列的带隙发射大幅增强即强度带隙之间的比例和缺陷的排放时增加一个数量级以上激发能量扫描整个OK-edge。
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