High yield fabrication of hollow vesica-like silicon based on the Kirkendall effect and its application to energy storage

摘要

Recently, a unique process based on the Kirkendall effect was employed to generate hollow nanostructures with a wide variety of materials. However, a similar hollow structure of silicon based on the fabrication mechanism of the Kirkendall effect is still not proposed. Here, we provide an extensible synthesis method for the high yield fabrication of a uniform vesica-like hollow Si material from SiO2 based on the Kirkendall effect in a molten salt reduction process. Significantly, without further modification, the as-prepared hollow vesica-like Si exhibits a high electrochemical storage capacity and long cycling properties (similar to 712 mA h g(-1) at 0.36 A g(-1) over 200 cycles).