Interface engineering: broadband light and low temperature gas detection abilities using a nano-heterojunction device

摘要

Herein, we have designed a nano-heterojunction device using interface defects and band bending effects, which can have broadband light detection (from 365-940 nm) and low operating temperature (50 degrees C) gas detection abilities. The broadband light detection mechanism occurs because of the defects and band bending between the heterojunction interface. We have demonstrated this mechanism using CoSi2/SnO2, CoSi2/TiO2, Ge/SnO2 and Ge/TiO2 nano-heterojunction devices, and all these devices show broadband light detection ability. Furthermore, the nano-heterojunction of the nano-device has a local Joule-heating effect. For gas detection, the results show that the nano-heterojunction device presents a high detection ability. The reset time and sensitivity of the nano-heterojunction device are an order faster and larger than Schottky-contacted devices (previous works), which is due to the local Joule-heating effect between the interface of the nano-heterojunction. Based on the abovementioned idea, we can design diverse nano-devices for widespread use.