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Fast and large-area growth of uniform MoS2 monolayers on molybdenum foils

机译:快速、大面积均匀二硫化钼的增长单层膜在钼箔

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摘要

A controllable synthesis of two-dimensional crystal monolayers in a large area is a prerequisite for potential applications, but the growth of transition metal dichalcogenide monolayers in a large area with spatial homogeneity remains a great challenge. Here we report a novel and efficient method to fabricate large-scale MoS2 monolayers by direct sulfurization of pre-annealed molybdenum foil surfaces with large grain boundaries of more than 50 mu m in size at elevated temperatures. Continuous MoS2 monolayers can be formed uniformly by sulfurizing the Mo foils in sulfur vapor at 600 degrees C within 1 min. At a lower temperature even down to 500 degrees C, uniform MoS2 monolayers can still be obtained but in a much longer sulfurizing duration. It is demonstrated that the formed monolayers can be nondestructively transferred onto arbitrary substrates by removing the Mo foil using diluted ferric chloride solution and can be successfully fabricated into photodetectors. The results show a novel avenue to efficiently fabricate two-dimensional crystals in a large area in a highly controllable way and should have great potential for the development of large-scale applications of two-dimensional crystals in electrophotonic systems.
机译:二维的可控合成晶体层是在一个大区域潜在应用的先决条件,但过渡金属dichalcogenide的增长单层膜与空间在一个大区域同质性仍然是一个巨大的挑战。报告一种新型、高效的方法来制作大规模的单层二硫化钼的直接硫化pre-annealed钼箔表面有大量的晶界在升高的温度下50μm。可以形成连续的单层二硫化钼均匀的硫化钼箔的硫磺1分钟内蒸汽在600摄氏度,较低甚至温度降至500摄氏度,制服单层二硫化钼仍然可以获得但硫化时间长得多。证明了单层膜可以形成的无损转移到任意使用稀释基质的钼箔氯化铁溶液,可以成功制成光电探测器。一个新颖的途径有效地制造二维晶体在大区域高度可控的方式,应该有很大的大规模的发展潜力二维晶体的应用electrophotonic系统。

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