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Noise and sensitivity characteristics of solid-state nanopores with a boron nitride 2-D membrane on a pyrex substrate

机译:噪音和敏感性的特点氮化硼二维固态纳米孔高硅衬底上薄膜

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We have fabricated highly sensitive and low noise solid-state nanopores with multiple layers of boron nitride (BN) membranes transferred onto a pyrex substrate. Both the dielectric and flicker noise of the device, which have been described as one of the bottlenecks to making highly sensitive 2-D membrane nanopore devices, have been reduced as follows. Firstly, a pyrex substrate with a low dielectric constant (epsilon(1) = 4.7-5.1) and low dielectric loss (D < 0.001) is used instead of a Si substrate to reduce the dielectric noise of the device. Secondly, flicker noise is minimized by employing a 100 nm thick SiNx supporting layer with a small opening (less than 100 nm) for BN membrane transfer to enhance the mechanical stability. The flicker noise is further reduced by transferring multiple layers of BN instead of a single layer of BN. The resulting multi-layered BN device shows significant reduction of dielectric and 1/f noise as compared to the devices with a single layer of the BN and Si substrate. Furthermore, we demonstrate dsDNA translocations with a high signal to noise ratio around 50 at 100 and 10 kHz bandwidths.
机译:我们制作的高度敏感和低噪声固态纳米孔和多层次的氮化硼(BN)膜转移到一个高硅衬底。噪音的装置,被描述为使高度敏感的瓶颈之一二维纳米孔膜设备,降低如下。介电常数(ε(1)= 4.7 - -5.1)低介电损耗(D < 0.001)的Si衬底减少介质噪声的设备。使用100纳米厚SiNx最小化了支持层小(小于100 nm) BN膜转移到提高机械稳定性。进一步降低传输多个层BN代替单层的BN。结果多层BN设备显示介电和1 / f噪声的显著减少相比与一层的设备BN和Si衬底。展示高dsDNA易位信号噪声比约50 100和10 kHz带宽。

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