Spirals and helices by asymmetric active surface growth

摘要

We show that spiral and helical Au nanowires can be directly grown via the active surface growth mechanism. The formation of spiral nanowires as opposed to straight nanowires is not triggered by the presence of a particular reactant, but controlled by the ratio of reactant concentrations. We propose that the asymmetric blocking of the Au-substrate interface induces imbalanced growth of the nanowire, causing it to curve. Blocking a single corner of the active interface leads to spiral nanowires whereas blocking two corners leads to helical nanowires. Spiral and helical nanowires become more frequent when the diffusion of Au is the limiting factor, as the reactant ratio falls below a critical value. The transition from helices to spirals and finally to nearly straight nanowires indicates a gradual loss of the blocked sites, hence supporting the asymmetric blocking mechanism.