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首页> 外文期刊>Nanoscale >Near-field spectroscopic imaging of exciton quenching at atomically sharp MoS2/WS2 lateral heterojunctions
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Near-field spectroscopic imaging of exciton quenching at atomically sharp MoS2/WS2 lateral heterojunctions

机译:激子的近场光谱成像在自动淬火锋利的二硫化钼/ WS2侧

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摘要

Heterojunctions made by laterally stitching two different transition metal dichalcogenide monolayers create a unique one-dimensional boundary with intriguing local optical properties that can only be characterized by nanoscale-spatial-resolution spectral tools. Here, we use near-field photoluminescence (NF-PL) to reveal the narrowest region (105 nm) ever reported of photoluminescence quenching at the junction of a laterally stitched WS2/MoS2 monolayer. We attribute this quenching to the atomically sharp band offset that generates a strong electric force at the junction to easily dissociate excitons. Besides the sharp heterojunction, a model considering various widths of the alloying interfacial region under low or high optical pumping is presented. With a spatial resolution six times better than that of confocal microscopy, NF-PL provides an unprecedented spectral tool for non-scalable 1D lateral heterojunctions.
机译:垂直的横向拼接两个不同的过渡金属dichalcogenide层创建一个独特的一维边界与当地有趣的光学特性那只能等特点nanoscale-spatial-resolution光谱工具。在这里,我们使用近场光致发光(NF-PL)揭示最窄的区域(105海里)光致发光猝灭的报道结外侧缝二硫化钨/二硫化钼单层。自动锋利乐队抵消生成一个强劲的电力连接轻松地分离激子。模型考虑各种异质结宽度下的合金界面区域低或高的光抽运。空间分辨率优于6倍共焦显微镜,NF-PL提供了前所未有的非1 d光谱工具横向垂直。

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