The present work reports observation of exposure of light in thin films of Se_(70) Te_(28)Zn_2 and Se_(96)Bi_4 samples. Amorphous materials have been produced by evaporation method. White light is incident on amorphous materials which are having the intensity of 990 lux. Time of incident light is changed from 0 to 5 hours. The localized state density is determined by method of SCLC, dark as well as presence of light. The localized states density rise with the rise in time of light in Se_(70) Te_(28) Zn_2 thin film as well as Se_(96)Bi_4 glassy alloy. The results indicate that thin-film sample Se_(70)Te_(28) Zn_2 have density of defect states higher than Se_(96)Bi_4 samples.
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