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Ultra-long zinc oxide nanowires and boron doping based on ionic liquid assisted thermal chemical vapor deposition growth

机译:超长氧化锌纳米线和基于离子液体辅助热化学蒸气沉积生长的硼掺杂

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摘要

Ionic liquid assisted growth of ultra-long ZnO nanowires from thermal chemical vapor deposition and the incorporation of dopants into the ZnO lattice have been investigated. We find that decomposed components of the ionic liquid at higher temperatures facilitate ultra-long vapor-liquid-solid ZnO nanowires that exhibit an unusual a-axis orientation. In particular, the ionic liquid BMImBF(4) has been studied and the mechanism of the nanowire growth model in response to the use of the ionic liquid has been explained. We show that boron which is part of the investigated ionic liquid incorporates into the ZnO lattice and serves as a donor source. Electrical measurements were conducted and have shown an enhanced electrical conductivity (rho = 0.09 Omega cm) when using the ionic liquid assisted growth approach. This work represents a step towards the controlled doping for designing future nanowire devices.
机译:已经研究了从热化学蒸气沉积中的超长ZnO纳米线的离子液体辅助生长,并将掺杂剂掺入ZnO晶格中。 我们发现,在较高温度下,离子液体的分解成分有助于表现出异常A轴取向的超长蒸气液溶液ZnO纳米线。 特别是,已经研究了离子液体BMIMBF(4),并解释了纳米线生长模型的机理,以响应使用离子液体的使用。 我们表明,是研究的离子液体的一部分,将硼纳入ZnO晶格,并作为供体来源。 进行电气测量,并在使用离子液体辅助生长方法时显示出增强的电导率(RHO = 0.09欧米茄CM)。 这项工作代表了朝着设计未来纳米线设备的受控掺杂的一步。

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