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Three dimensional confined states in core-shell diameter modulated nanowires

机译:核心壳直径调制纳米线三维限制状态

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摘要

Three-dimensional confined states in a GaP nanowire which partially covered by a uniform InP shell have been investigated in this paper. To this end, based on the effective mass approximation and by using the finite element method electronic energy states of the system were calculated. To attain physical insight on the numerical results, we have utilized the concept of one dimensional angular momentum dependent effective potential. Our results indicate a peculiar effect of increasing the 3D confinement of electrons in the shell which partially covered the nanowire by increasing the angular momentum. Surviving the effective potential declares that this effect arises as a consequence of contact with the semi-infinite nanowire parts of the system and, as a result, leads the bound states of higher angular momentum to lie in the energy continuum of the lower ones. On the other hand, application of external magnetic field reduces the number of 3D confined states in the core?shell region. Analysis of the reverse structure, i.e. InP nanowire which partially covered with GaP, indicates a significant increase in electronic confinement in the core?shell section with respect to the InP/GaP counterpart as a result of lower electronic effective mass of InP regarding to GaP.
机译:本文研究了均匀InP壳层部分覆盖的GaP纳米线中的三维约束态。为此,基于有效质量近似并使用有限元方法计算了系统的电子能态。为了获得对数值结果的物理见解,我们利用了一维角动量相关有效势的概念。我们的结果表明,通过增加角动量,增加了部分覆盖纳米线的壳层中电子的三维限制。有效势的存在表明,这种效应是由于与系统的半无限纳米线部分接触而产生的,因此,较高角动量的束缚态位于较低角动量的能量连续体中。另一方面,外加磁场的应用减少了堆芯中三维受限状态的数量?壳区。对反向结构(即部分被GaP覆盖的InP纳米线)的分析表明,核心中的电子约束显著增加?由于InP相对于GaP的电子有效质量较低,相对于InP/GaP对应物的壳截面。

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