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Ab initio study of anisotropic properties in isomorphic TiX2 (X = S, Se, Te)

机译:AB Initio在同构Tix2中各向异性特性的研究(X = S,SE,TE)

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摘要

Isomorphic titanium dichalcogenides TiX2 (X = S, Se, Te) exhibit diverse and anisotropic chemical and physical properties. Bulk TiSe2 was found to exhibit anomalous behavior at low temperatures, leading to emergence of a charge density wave (CDW) due to superstructure formation, bulk TiS2 and TiTe2 do not exhibit CDW instability. The diversity is investigated through the electronic structure by using density functional theory-based full potential linearized augmented plane wave and projector augmented wave methods. The latest generalized gradient approximation-Perdew-Burke-Ernzerhof correction for solids-Trans-Blaha-modified Becke-Johnson potential confirm that TiS2 is semiconducting whereas TiSe2 and TiTe2 are metallic. The diverse properties are governed by two bands, S/Se/Te p-band near the Gamma-point and Ti 3d-band around M (L)-points. The phonon and energy band structures are correlated to explain the occurrence of CDW. Phonon mode with imaginary frequency indicates lattice instability and the displacements of Ti-Se atoms allows the mixing of states of the electron and hole pockets leading to lattice distortion, which lowers the energy of the TiSe2 system.
机译:同构的二氯化钛TiX2(X=S,Se,Te)具有多样性和各向异性的化学和物理性质。发现大块TiS2在低温下表现出异常行为,导致由于超结构的形成而出现电荷密度波(CDW),大块TiS2和TiT2没有表现出CDW不稳定性。利用基于密度泛函理论的全势线性化增强平面波和投影增强波方法,研究了电子结构的多样性。最新的广义梯度近似Perdew-Burke-Ernzerhof固体修正Trans-Blaha修正Becke-Johnson势证实TiS2是半导体,而TiSe2和TiTe2是金属。不同的属性由两个带控制,伽马点附近的S/Se/Te p带和M(L)点周围的Ti 3d带。声子和能带结构的关联解释了CDW的发生。虚频声子模式表明晶格不稳定,Ti-Se原子的位移允许电子和空穴状态的混合,导致晶格畸变,从而降低TiSe2系统的能量。

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