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首页> 外文期刊>ACS applied materials & interfaces >Exotic Quad-Domain Textures and Transport Characteristics of Self-Assembled BiFeO3 Nanoislands on Nb-Doped SrTiO3
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Exotic Quad-Domain Textures and Transport Characteristics of Self-Assembled BiFeO3 Nanoislands on Nb-Doped SrTiO3

机译:NB掺杂SRTIO3上自组装BIFEO3纳米岛的异国情调的四域纹理和传输特性

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摘要

Topological quad-domain textures with interesting cross-shaped buffer domains (walls) have been recently observed in BiFeO_(3) (BFO) nanoislands, indicating a new platform for exploring topological defects and multilevel memories. Such domain textures have nevertheless only been limited in BFO nanoislands grown on LaAlO_(3) substrates with a large lattice mismatch of ~?4.4%. Here, we report that such exotic domain textures could also form in BFO nanoislands directly grown on a conductive substrate with a much smaller lattice mismatch and the local transport characteristics of the BFO nanoislands are distinct from the previously reported ones. The angle-resolved piezoresponse force images verify that the domain textures consist of center-divergent quad-domains with upward polarizations and cross-shaped buffer domains with downward polarizations. Interestingly, textures with multiple crosses are also observed in nanoislands of larger sizes, besides the previously reported ones with a single cross. The nanoislands exhibit strong diodelike rectifying characteristics and the quad-domains show a higher average conductance than the cross-shaped buffer domains, indicating that there is a certain correlation between the local conductance of the nanoislands and the domain textures. This transport behavior is attributed to the effect of the depolarization field on the Schottky barriers at both the substrate/BFO interface and the tip/BFO junction. Our findings extend the current understanding of the exotic quad-domain textures of ferroelectric nanoislands and shed light on their potential applications for configurable electronic devices.
机译:最近,在BiFeO_3(BFO)纳米岛上观察到了具有有趣的十字形缓冲区(壁)的拓扑四畴纹理,这为探索拓扑缺陷和多级存储器提供了一个新的平台。然而,这种畴织构仅限于生长在LaAlO_3衬底上的BFO纳米岛,其晶格失配为~?4.4%. 在这里,我们报告说,这种奇异的畴结构也可以在直接生长在导电衬底上的BFO纳米岛中形成,晶格失配小得多,并且BFO纳米岛的局部输运特性与之前报道的不同。角分辨压电响应力图像验证了畴纹理由具有向上极化的中心发散四畴和具有向下极化的十字形缓冲畴组成。有趣的是,除了之前报道的单交叉纳米岛外,在更大尺寸的纳米岛中也观察到了具有多个交叉的纹理。纳米岛呈现出强烈的二极管状整流特性,四畴的平均电导高于十字形缓冲畴,表明纳米岛的局部电导与畴结构之间存在一定的相关性。这种输运行为归因于去极化场对衬底/BFO界面和尖端/BFO结肖特基势垒的影响。我们的发现扩展了目前对铁电纳米岛奇异四畴结构的理解,并阐明了它们在可配置电子设备中的潜在应用。

著录项

  • 来源
    《ACS applied materials & interfaces》 |2021年第10期|共10页
  • 作者单位

    Micro&

    Nano Physics and Mechanics Research Laboratory School of Physics Sun Yat-sen University;

    Micro&

    Nano Physics and Mechanics Research Laboratory School of Physics Sun Yat-sen University;

    Micro&

    Nano Physics and Mechanics Research Laboratory School of Physics Sun Yat-sen University;

    Micro&

    Nano Physics and Mechanics Research Laboratory School of Physics Sun Yat-sen University;

    Micro&

    Nano Physics and Mechanics Research Laboratory School of Physics Sun Yat-sen University;

    School of Physics Sun Yat-sen University;

    State Key Laboratory of Optoelectronic Materials and Technologies School of Materials Sun Yat-sen University;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学工业;
  • 关键词

    ferroelectric; BFO; nanoisland; topological defects; PFM; conductance;

    机译:铁电体;BFO;纳米岛;拓扑缺陷;PFM;电导;

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