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Two-dimensional extreme skin depth engineering for CMOS photonics

机译:CMOS Photonics的二维极端肌肤深度工程

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摘要

Extreme skin depth engineering (e-skid) can be applied to integrated photonics to manipulate the evanescent field of a waveguide. Here we demonstrate that e-skid can be implemented in two directions in order to deterministically engineer the evanescent wave allowing for dense integration with enhanced functionalities. In particular, by increasing the skin depth, we enable the creation of two-dimensional (2D) e-skid directional couplers with large gaps and operational bandwidth. Here we experimentally validate 2D e-skid for integrated photonics in a complementary metal-oxide semiconductor (CMOS) photonics foundry and demonstrate strong coupling with a gap of 1.44 mu m. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
机译:极端趋肤深度工程(e-skid)可应用于集成光子学,以操纵波导的倏逝场。在这里,我们证明了e-skid可以在两个方向上实现,以确定地设计倏逝波,从而实现与增强功能的密集集成。特别是,通过增加趋肤深度,我们能够创建具有大间隙和工作带宽的二维(2D)e-skid定向耦合器。在这里,我们实验验证2D E-SKID的集成光子学在互补金属氧化物半导体(CMOS)光子学铸造,并展示了强大的耦合与间隙1.44μm(C)2021美国光学协会的条款下的OSA开放存取出版协议。

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