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首页> 外文期刊>Journal of Materials Engineering and Performance >Effect of Bias Voltage on Characteristics of Multilayer Si-DLC Film Coated on AA6061 Aluminum Alloy
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Effect of Bias Voltage on Characteristics of Multilayer Si-DLC Film Coated on AA6061 Aluminum Alloy

机译:偏压对AA6061铝合金多层Si-DLC膜特性的影响

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摘要

The multilayer Si-DLC films have been deposited on AA6061 aluminum alloy using a mesh hollow cathode plasma-enhanced chemical vapor deposition technique from acetylene and silane precursor gas at temperature 373 K. Low magnification electron microscopes, Raman spectroscopy, and Fourier transform infrared spectroscopy were employed for characterizing the coating film structure. The MFT-4000 scratch tester, G200 nano-indentation tester, and MS-T3001 tribology tester were utilized to evaluate the adhesion strength, mechanical properties, and friction coefficient. Potentiodynamic polarization and potentiostatic techniques were used to study the multilayer Si-DLC films electrochemical behavior in harsh solution 3.5 wt.% NaCl. The findings revealed that the increase in bias voltage to - 300 V led to the adhesion strength, hardness, elastic modulus, and friction coefficient around 18N, 9.89 GPa, 85.57 GPa, and 0.17, respectively. The polarization results showed a decrease in corrosion current density, increased polarization resistance, and decreased passive current almost 1.28x10(-10) A/cm(-2), 5.26x10(9) omega cm(2), and 24.3 nA cm(-2), respectively. The findings are ascribed to reduce the internal stress and increase the overall content of sp(3) bonds in the film. Moreover, the Si-doped DLC film forms a passive layer from SiOx at the film/solution interface to impede the charge transfer.
机译:采用网状空心阴极等离子体增强化学气相沉积技术,从乙炔和硅烷前体气体中,在373K温度下,在AA6061铝合金上沉积了多层Si-DLC薄膜。采用低倍电子显微镜、拉曼光谱和傅里叶变换红外光谱对涂层结构进行了表征。使用MFT-4000划痕试验机、G200纳米压痕试验机和MS-T3001摩擦学试验机评估附着力、机械性能和摩擦系数。采用动电位极化和恒电位技术研究了多层Si-DLC薄膜在3.5wt.%NaCl溶液中的电化学行为。结果表明,偏压增加到-300V时,粘着强度、硬度、弹性模量和摩擦系数分别在18N、9.89GPa、85.57GPa和0.17左右。极化结果表明,腐蚀电流密度降低,极化电阻增加,无源电流降低,分别为1.28x10(-10)a/cm(-2)、5.26x10(9)omega-cm(2)和24.3 nA-cm(-2)。这些发现被认为是降低了薄膜的内应力,增加了sp(3)键的总含量。此外,掺硅DLC薄膜在薄膜/溶液界面处形成了一个由SiOx形成的无源层,以阻止电荷转移。

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