Thermal Conductivity of the Materials Based on Silicon Carbide and Silicon Nitride

摘要

The temperature dependences of the thermal conductivity of silicon carbide- and silicon nitride-based materials prepared by various methods are presented. The thermal conductivity of silicon carbide-based materials prepared by reaction (SiSiC) and liquid-phase (LPSSiC) sintering and silicon nitride-based materials prepared by liquid phase sintering (SSN) is studied. The dependences of the thermal conductivity on the density, porosity, and content of oxide addition (for the LPSSiC and SSN materials) are presented.