A Design Methodology to Optimize the Device Performance in CNTFET

摘要

In the last decades scaling of MOSFETs based on Moore's law faced a problem. Carbon-Nano-Tube (CNT) is a promising candidate for scaling the Field-Effect Transistors (FET) into nanometer. The gate insulator thickness and CNT length play vital role in the CNTFET performance. In this paper, a new method is proposed to improve the CNTFET performance. In this novel method, artificial intelligence algorithm is utilized to select the best gate insulator thickness and CNT length in the CNTFETs. The proposed method is simulated using MATLAB. The simulation results show that the performance of the proposed CNTFET model is considerably improved compared to other CNTFETs. (C) 2017 The Electrochemical Society. All rights reserved.