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Thermal properties of selected II-VI semiconductors determined by photopyroelectric calorimetry technique

机译:采用光学电压量热法测定的所选II-VI半导体的热性能

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The review presents the results of the investigations of the thermal properties of selected II-VI binary, ternary, and quaternary semiconductors. All tested crystals were grown from the melt using the high-pressure vertical Bridgman-Stockbarger method with different composition The main objective of the work was systematic examination of the thermal properties of the crystals using contact (PPE photopyroelectric) and non-contact (active thermography) measurement techniques. As a result of the studies, the values of the thermal diffusivity and the effusivity of all tested samples were obtained. For the selected series of crystals, their heat capacity was also determined. The thermal conductivity was calculated using simple relationships that combine all the thermal parameters. In this way, a complete thermal characterization of the crystals was carried out. For several ternary mixed crystals diagrams of the thermal conductivity versus composition were analyzed applying model for mixed semiconducting crystals given by Sadao Adachi. Thanks to that a contribution of the thermal resistivity arising from the lattice disorder to the total resistivity of the crystal has been determined. Although the PPE method itself is fairly simple, each material class requires a different approach. For samples with strongly different conductivity or thickness, different frequency ranges and a suitable detector should be used. This is not a simple task for the samples with unknown thermal properties. It is to mention that the PPE technique is a contact method and its main disadvantage in case of solid samples is to provide good thermal contact between the sample and the detector. In practice, it is realized by gluing a sample to the detector with a small amount of different types of liquids. It has been shown that the influence of the coupling layer can be minimized by appropriate modification of the experimental system and proper selection of the coupling fluid. In this way, the photopyroelectric method has been satisfactorily adapted for the thermal characterization of II-VI crystals.
机译:本文综述了所选II-VI二元、三元和四元半导体的热性能研究结果。所有受试晶体均采用高压垂直Bridgman-Stockbarger法从熔体中生长,成分不同。本工作的主要目的是使用接触(PPE光热释电)和非接触(主动热成像)测量技术对晶体的热性能进行系统检查。根据研究结果,获得了所有测试样品的热扩散率和渗出率值。对于选定的系列晶体,还测定了它们的热容。热导率是使用简单的关系式计算的,这些关系式结合了所有的热参数。通过这种方式,对晶体进行了完整的热表征。对于几种三元混合晶体,应用Sadao Adachi给出的混合半导体晶体模型,分析了热导率和成分的关系图。正因为如此,晶格无序引起的热阻率对晶体总电阻率的贡献已经确定。虽然PPE方法本身相当简单,但每个材质类都需要不同的方法。对于电导率或厚度差异较大的样品,应使用不同的频率范围和合适的检测器。对于热性质未知的样品来说,这不是一项简单的任务。值得一提的是,PPE技术是一种接触方法,对于固体样品,其主要缺点是在样品和检测器之间提供良好的热接触。实际上,它是通过用少量不同类型的液体将样品粘到检测器上实现的。结果表明,通过适当修改实验系统和选择合适的耦合流体,可以将耦合层的影响降至最低。通过这种方式,光热释电方法已令人满意地适用于II-VI晶体的热表征。

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